Comparative investigations of surface structure, photoluminescence and its excitation in silicon wires

Journal of Electron Spectroscopy and Related Phenomena

Volumn 114-116, Issue , 2001, Pages 235-241

  Polupan, G P ^a   Torchynska, T V ^a   Palacios Gomez, J ^a   Flores Gonzalez, H A ^a   Bacarril Espinoza, F G ^a   Ita Torre, A ^b   Bulakh, B M ^c   Scherbina, L V ^c  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b UNIVERSIDAD AUTÓNOMA METROPOLITANA AZCAPOTZALCO   (Mexico)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON ENERGY LEVELS; OXIDES; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; POROUS MATERIALS; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON WIRES;

SEMICONDUCTING SILICON;

EID: 4244076410     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0368-2048(00)00379-0     Document Type: Article

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