Suboxide-related centre as the source of the intense red luminescence of porous Si

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 485-493

  Korsunskaya, N E ^a   Torchinskaya, T V ^a   Khomenkova, L Yu ^a   Dzhumaev, B R ^a   Prokes, S M ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ANNEALING; COMPOSITION EFFECTS; INFRARED SPECTROSCOPY; OXIDATION; OXIDES; PHOTOLUMINESCENCE; X RAY PHOTOELECTRON SPECTROSCOPY;

INFRARED ABSORPTION; OXIDE COMPOSITION; PHOTOLUMINESCENCE EXCITATION SPECTRA; PHOTOLUMINESCENCE INTENSITY;

POROUS SILICON;

EID: 0033726821     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00503-1     Document Type: Article

References (14)

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