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Volumn 17, Issue 4, 2002, Pages 322-326

Magnetoresistive switch effect in metal/semiconductor hybrid granular films: Extremely huge magnetoresistance effect at room temperature

(1) Akinaga, H a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; FILM GROWTH; GRANULAR MATERIALS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

HYBRID GRANULAR FILMS; MAGNETORESISTIVE SWITCH EFFECT;

SEMICONDUCTING FILMS;

EID: 0036531777 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/4/305 Document Type: Article

Times cited : (20)

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