InAs/(Al,Ga)Sb quantum well structures for magnetic sensors

IEEE Transactions on Magnetics

Volumn 34, Issue 4 PART 1, 1998, Pages 1300-1302

  Sehet, M ^a   Das, J ^a   De Boeck, J ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

Hall element; Inas quantum well; Magnetoresistor; MBE

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SENSORS;

MAGNETIC SENSORS;

MAGNETIC SEMICONDUCTORS;

EID: 0032120818     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.706528     Document Type: Article

References (6)

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