Structural and magnetic properties of epitaxial (0001) MnSb thin films grown on (111) B GaAs: Influence of interface quality

Applied Physics Letters

Volumn 70, Issue 18, 1997, Pages 2472-2474

  Akinaga, H ^a,c   Miyanishi, S ^a,d   Van Roy, W ^a   Kuo, L H ^b  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000576226     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118860     Document Type: Article

References (21)

1. K. Inomata, K. Yasu, and Y. Saito, Phys. Rev. Lett. 74, 1863 (1995).
2. B. Briner and M. Landolt, Phys. Rev. Lett. 73, 340 (1993).
3. E. E. Fullerton, J. E. Mattson, S. R. Lee, C. H. Sowers, Y. Y. Huang, G. Felcher, S. D. Bader, and F. T. Parker, J. Appl. Phys. 73, 6335 (1993).
4. H. Akinaga, K. Tanaka, K. Ando, and T. Katayama, J. Cryst. Growth 150, 1144 (1995).
5. S. Miyanishi, H. Akinaga, and K. Tanaka, Appl. Phys. Lett. 68, 2890 (1996).
6. M. Tanaka, J. P. Harbison, M. C. Park, Y. S. Park, T. Shin, and G. M. Rothberg, Appl. Phys. Lett. 65, 1964 (1994).
7. M. Tanaka, J. P. Harbison, J. De Boeck, T. Sands, B. Philips, T. L. Cheeks, and V. G. Keramidas, Appl. Phys. Lett. 62, 1565 (1993).
8. H. Akinaga, Y. Suzuki, K. Tanaka, K. Ando, and T. Katayama, Appl. Phys. Lett. 67, 141 (1995).
9. T. Sands, C. J. Palmstrøm, J. P. Harbison, V. G. Keramidas, N. Tabatabaie, T. L. Cheeks, R. Ramesh, and Y. Silverberg, Mater. Sci. Rep. 5, 99 (1990).
10. Y. Xin, P. D. Brown, C. B. Boothroyd, C. J. Humphreys, H. Tatsuoka, H. Kuwabara, M. Oshita, T. Nakamura, H. Fujiyasu, and Y. Nakanishi, J. Cryst. Growth 156, 155 (1995).
11. H. Ikekame, Y. Morishita, and K. Sato, J. Magn. Soc. Jpn. 20, 181 (1996).
12. For example, Albert Chin and B. C. Lin, Appl. Phys. Lett. 68, 2717 (1996); E. Michel, J. D. Kim, S. Javadpour, J. Xu, I. Ferguson, and M. Razeghi, ibid. 69, 215 (1996); Dae-Gyu Park, Deda M. Diatezua, Zhi Chen, S. Noor Mohammad, and Hadis Morkoç, ibid. 69, 3025 (1996).
13. For example, Albert Chin and B. C. Lin, Appl. Phys. Lett. 68, 2717 (1996); E. Michel, J. D. Kim, S. Javadpour, J. Xu, I. Ferguson, and M. Razeghi, ibid. 69, 215 (1996); Dae-Gyu Park, Deda M. Diatezua, Zhi Chen, S. Noor Mohammad, and Hadis Morkoç, ibid. 69, 3025 (1996).
14. For example, Albert Chin and B. C. Lin, Appl. Phys. Lett. 68, 2717 (1996); E. Michel, J. D. Kim, S. Javadpour, J. Xu, I. Ferguson, and M. Razeghi, ibid. 69, 215 (1996); Dae-Gyu Park, Deda M. Diatezua, Zhi Chen, S. Noor Mohammad, and Hadis Morkoç, ibid. 69, 3025 (1996).
15. E. A. Caridi, T. Y. Chang, K. W. Goossen, and L. F. Eastman, Appl. Phys. Lett. 56, 659 (1990).
16. G. A. Prinz, Science 250, 1092 (1990).
17. F. Maeda, Y. Watanabe, and M. Oshima, Phys. Rev. B 48, 14 733 (1993).
18. L. H. Kuo, L. Salamanca-Riba, B. J. Wu, G. Hofler, J. M. DePuydt, and H. Cheng, Appl. Phys. Lett. 67, 3298 (1995).
19. P. Singh, Mater. Lett. 7, 293 (1988).
20. The magnetization of the film of type II and the thick film will be saturated at about 3 T. (see Ref. 11). The saturated Kerr ellipticity at 3 T is computed at 10% larger than the ellipticity at 1.88 T. In the estimation of the GaSb layer thickness, this increase is taken into account.
21. P. F. Carcia, A. D. Meinhaldt, and A. Suna, Appl. Phys. Lett. 47, 178 (1985).