GaN growth by compound source molecular beam epitaxy

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1008-1011

  Honda, Tohru ^a   Sato, Kei ^a   Hashimoto, Takanori ^a   Shinohara, Masaki ^a   Kawanishi, Hideo ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL ORIENTATION; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; SUBSTRATES;

ONSURFACE CRACKING (OSC);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036531078     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02117-0     Document Type: Article

References (13)