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Volumn 189-190, Issue , 1998, Pages 189-192

Direct growth of GaN on (0 0 0 1) 6H-SiC by low-pressure MOVPE with a flow channel

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

EID: 0032093717     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00201-2     Document Type: Article
Times cited : (14)

References (11)
  • 9
    • 0030709145 scopus 로고    scopus 로고
    • F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar (Eds.), Proc. Materials Research Society Symp. III-V Nitrides, University Microfilms Inc., Michigan
    • K. Horino, A. Kuramata, T. Tanahashi, in: F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar (Eds.), Proc. Materials Research Society Symp. III-V Nitrides, Mater. Res. Soc. Symp. Proc. vol. 449, University Microfilms Inc., Michigan, 1997, pp. 73-78.
    • (1997) Mater. Res. Soc. Symp. Proc. , vol.449 , pp. 73-78
    • Horino, K.1    Kuramata, A.2    Tanahashi, T.3
  • 11
    • 0030672578 scopus 로고    scopus 로고
    • F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar (Eds.), Proc. the Materials Research Society Symp. III-V Nitrides, University Microfilms Inc., Michigan
    • S. Tanaka, H. Hirayama, S. Iwai, Y. Aoyagi, in: F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar (Eds.), Proc. the Materials Research Society Symp. III-V Nitrides, Mater. Res. Soc. Symp. Proc., vol. 449, University Microfilms Inc., Michigan, 1997, pp. 135-140.
    • (1997) Mater. Res. Soc. Symp. Proc. , vol.449 , pp. 135-140
    • Tanaka, S.1    Hirayama, H.2    Iwai, S.3    Aoyagi, Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.