Compound source molecular beam epitaxy for II-VI laser structures

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 632-635

  Ohkawa, K ^a   Tsujimura, A ^a   Nishikawa, T ^a   Yoshii, S ^a   Yokogawa, T ^a   Kubo, M ^a   Sasai, Y ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; SURFACES;

COMPOUND SOURCE MOLECULAR BEAM EPITAXY; LASER STRUCTURES; QUARTERNARY ALLOYS; RADICAL DOPING; TERNARY ALLOYS;

SEMICONDUCTOR LASERS;

EID: 0030562448     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00828-4     Document Type: Article

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