High-deposition-rate a-Si:H through VHF-CVD of argon-diluted silane

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 459-470

  Meiling, H ^a   Bezemer, J ^a   Schropp, R E I ^a   van der Weg, W F ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL VAPOR DEPOSITION; ELECTRONIC DENSITY OF STATES; GLOW DISCHARGES; HYDROGEN BONDS; HYDROGENATION; ION BOMBARDMENT; SEMICONDUCTOR GROWTH; SILANES; THIN FILM TRANSISTORS;

HYDROGENATED AMORPHOUS SILICON; SATURATION MOBILITY; STRUCTURAL PROPERTIES;

AMORPHOUS SILICON;

EID: 0031334268     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-459     Document Type: Conference Paper

References (38)