Reduction of defect density in GaN epilayer having buried Ga metal by MOCVD

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 1060-1064

  Sumiya, Masatomo ^a   Kurumasa, Youichi ^a   Ohtsuka, Kohji ^b   Kuwahara, Kazuhiro ^a   Takano, Yasushi ^a   Fuke, Shunro ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b SANKEN ELECTRIC CO LTD   (Japan)

Author keywords

A3. Metalorganic chemical vapor depositon; A3. Selective epitaxy; B1. Gallium compounds; B1. Nitrides

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; GALLIUM NITRIDE; MORPHOLOGY; SAPPHIRE; SEMICONDUCTING FILMS;

EPILAYERS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0036530903     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02127-3     Document Type: Article

References (8)