Influence of counter-layer deposition condition on critical current spread in interface-modified ramp-edge junction arrays

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 3 A, 2002, Pages

  Wakana, Hironori ^a   Adachi, Seiji ^a   Horibe, Masahiro ^a   Ishimaru, Yoshihiro ^a   Horibe, Osami ^a   Tarutani, Yoshinobu ^a   Tanabe, Keiichi ^a  

^a SUPERCONDUCTIVITY RESEARCH LABORATORY   (Japan)

Author keywords

Interface modified ramp edge junction; Junction arrays; La doped YbBa2Cu3Oy film; Pulsed laser deposition

Indexed keywords

ATOMS; CRITICAL CURRENTS; CRYSTALLIZATION; INTERFACES (MATERIALS); LANTHANUM; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; YTTRIUM BARIUM COPPER OXIDES;

COUNTER-LAYER DEPOSITIONS; JUNCTION ARRAYS;

SEMICONDUCTOR JUNCTIONS;

EID: 0036508961     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l239     Document Type: Article

References (17)