Ge-rich Si1-xGex nanocrystal formation by the oxidation of an as-deposited thin amorphous Si0.7Ge0.3 layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 2, 2002, Pages 631-634

  Yoon, Tae Sik ^a   Kim, Ki Bum ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS ALLOYS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; GRAIN GROWTH; MATHEMATICAL MODELS; OXIDATION; RATE CONSTANTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 0036504838     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1458955     Document Type: Article

References (23)