A review of ULSI failure analysis techniques for DRAMs 1. Defect localization and verification

Microelectronics Reliability

Volumn 42, Issue 3, 2002, Pages 307-316

  Benstetter, Guenther ^a   Ruprecht, Michael W ^b   Hunt, Douglas B ^c  

^a DEGGENDORF INSTITUTE OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; FOCUSING; ION BEAMS; LIQUID CRYSTALS; MICROSCOPIC EXAMINATION; PHOTOEMISSION; SPECTROSCOPIC ANALYSIS; ULSI CIRCUITS;

DEFECT LOCALIZATION; PHOTO EMISSION MICROSCOPY (PEM); SCANNING ACOUSTIC MICROSCOPY (SAM);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0036497227     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00002-1     Document Type: Article

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