Failure Analysis of DRAM Storage Node Trench Capacitors for 0.35-Micron and Follow-On Technologies Using the Focused Ion Beam for Electrical and Physical Analysis

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn 1996-November, Issue , 1996, Pages 401-407

  Benstetter, G ^a   Bomberger, G ^b   Coutu, P ^b   Danyew, R ^b   Douse, R ^b  

^a Siemens Components Inc ^*  (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; CHEMICAL MECHANICAL POLISHING; DEFECTS; DEPOSITION; FOCUSED ION BEAMS; MILLING (MACHINING); PROBES; SCANNING ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

CELL-SIZE; ELECTRICAL ANALYSIS; FOCUSED IONS BEAMS; MECHANICAL POLISHING; PHYSICAL ANALYSIS; PROBE PADS; STORAGE NODES; SUBSTRATE MATERIAL; TRENCH CAPACITORS; VOLTAGE CONTRAST;

FAILURE ANALYSIS;

EID: 0002077076     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31399/asm.cp.istfa1996p0401     Document Type: Conference Paper

References (6)

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4. Giewont, K., Hunt, D., Hummler, K., "Probeless Voltage Contrast Using a FIB for Opens and Shorts Defect Isolation of 0.4 and 0.25 Micron Technologies", submitted to the Journal of Vacuum Science and Technology A.
5. Danyew, R., Douse, R., Coutu, P., Clark, W. and Berman, H., "Analytical Techniques and Procedures to Successfully Locate and Characterize Memory Storage Node Trench Defects", Proceedings of 1990 International Symposium for Testing and Failure Analysis, pp. 323-329.
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