Trench Storage Node Technology for Gigabit DRAM Generations

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 507-510

  Muller, K P ^a   Flietner, B ^a   Hwang, C L ^a   Kleinhenz, R L ^a   Nakao, T ^a   Ranade, R ^a   Tsunashima, Y ^a   Mii, T ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; MAGNETRONS; RANDOM ACCESS STORAGE; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR STORAGE;

DIPOLE RING MAGNETRON REACTOR; FAST THERMAL PROCESSOR; TRENCH STORAGE NODE TECHNOLOGY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030383557     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553853     Document Type: Conference Paper

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8. P.A. Tobias and D.C. Trindade, Applied Reliability, 2. edition, Van Nostrand Reinhold, New York, 1994