Cathodoluminescence study of h- and c-GaN single crystals grown by a Na or K flux

Science and Technology of Advanced Materials

Volumn 3, Issue 2, 2002, Pages 91-94

  Sekiguchi, T ^a   Yamane, H ^b   Aoki, M ^b   Araki, T ^b   Shimada, M ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Cathodoluminescence; Cubic GaN; Exciton; Flux growth; Hexagonal GaN

Indexed keywords

BINDING ENERGY; CATHODOLUMINESCENCE; CRYSTAL GROWTH; ENERGY GAP; EXCITONS; GALLIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; STRAIN; SUBSTRATES; SYNTHESIS (CHEMICAL);

BAND EDGE EMISSION;

SINGLE CRYSTALS;

EID: 0036494722     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1468-6996(02)00003-7     Document Type: Article

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