Very high current density pseudomorphic double channel In0.49Ga0.51P/In0.3Ga0.7As/ GaAs HEMT

Electronics Letters

Volumn 33, Issue 7, 1997, Pages 627-628

  Yang, H P D ^a   Hwang, F C ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

High electron mobility transistors

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE TESTING; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

GATE DRAIN BREAKDOWN; PLANAR FABRICATION TECHNIQUES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031098723     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970386     Document Type: Article

References (3)

1. NGO, D., BECKWITH, B., O'NEIL, P., and CAMILLERI, N.: 'Low voltage GaAs power amplifiers for personal communications at 1.9GHz'. IEEE MTT-S Dig., 1993, pp. 1461-1465
2. PEREIASLAVETS, B., BACHEM, K.H., BRAUNSTEIN, J., and EASTMAN, L.F.: 'GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results', IEEE Trans. Electron Devices, 1996, 43, (10), pp. 1659-1664
3. SUEHIRO, H., MIYATA, T., KURODA, S., HARA, N., and TAKIKAWA, M.: 'Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT's with 0.35 μm gates'. IEEE Trans. Electron Devices, 1994, 41, (10), pp. 1742-1746