Highly strained InGaP/InGaAs p-HEMT using reduced area growth

IEEE Electron Device Letters

Volumn 22, Issue 2, 2001, Pages 59-61

  Kim, Sang Soon ^a   Song, Jong In ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE;

PATTERNED SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035248992     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902831     Document Type: Article

References (4)

1. 0.7 As/GaAs HEMT," Electron. Lett., vol. 33, pp. 627-628, Mar. 1997.
2. M. Meshkinpour et al., "Role of misfit dislocations on pseudomorphic high electron mobility transistors," Appl. Phys. Lett., vol. 66, pp. 748-750, Feb. 1995.
3. E. A. Fitzgerald and G. P. Watson, "Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area," J. Appl. Phys., vol. 65, pp. 2220-2237, Mar. 1989.
4. W. Q. Li and P. K. Bhattacharya, "Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy," Appl. Phys. Lett., vol. 58, pp. 1931-1933, May 1991.