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Volumn 209, Issue 2-3, 2000, Pages 445-449

Photoluminescence characterization of type II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

(6) Mozume, Teruo a Georgiev, Nikolai a Nishimura, Tetsuya a Yoshida, Haruhiko a Nishikawa, Satoshi a Neogi, Arup a

a WASEDA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; EXCITONS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

ALUMINUM ARSENIC ANTIMONIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034140265 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00595-3 Document Type: Article

Times cited : (6)

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