Near-infrared intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1077-1080

  Mozume, Teruo ^a   Yoshida, Haruhiko ^a   Neogi, Arup ^a   Kudo, Makoto ^b  

^a WASEDA UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; CRYSTAL LATTICES; ELECTRON TRANSITIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

ALUMINUM ARSENIDE ANTIMONIDE; INTERSUBBAND ABSORPTION; LATTICE MATCHING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032690033     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01529-2     Document Type: Article

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