Realization of photo- and electroluminescent Si:Er structures by the method of sublimation molecular beam epitaxy

Nanotechnology

Volumn 13, Issue 1, 2002, Pages 97-102

  Andreev, B ^a   Chalkov, V ^b   Gusev, O ^c   Emel'yanov, A ^c   Krasil'nik, Z ^a   Kuznetsov, V ^b   Pak, P ^c   Shabanov, V ^b   Shengurov, V ^b   Shmagin, V ^a   Sobolev, N ^c   Stepikhova, M ^a   Svetlov, S ^b  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTROLUMINESCENCE; ELECTRON TUNNELING; MOLECULAR BEAM EPITAXY; MULTILAYERS; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBLIMATION; THERMAL EFFECTS;

SUBLIMATION MOLECULAR BEAM EPITAXY (SMBE);

LIGHT EMITTING DIODES;

EID: 0036471840     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/13/1/321     Document Type: Article

References (13)