Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si : Er : O diodes

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 315-319

  Sobolev, N A ^a   Nikolaev, Yu A ^a   Emel'yanov, A M ^b   Shtel'makh, K F ^b   Khakuashev, P E ^c   Trishenkov, M A ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^c Federal State Unitary Enterprise   (Russian Federation)

Author keywords

Avalanching light emitting diode; Electroluminescence; Erbium; Silicon

Indexed keywords

EID: 0347878343     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00118-5     Document Type: Article

References (5)

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