Properties of optically active Si:Er and Si 1-x Ge x layers grown by the sublimation MBE method [Thin Solid Films 369 (2000) 320-323)

Thin Solid Films

Volumn 381, Issue 1, 2001, Pages 164-169

  Stepikhova, M V ^a   Andreev, B A ^a   Shmagin, V B ^a   Krasil'Nik, Z F ^a   Kuznetsov, V P ^b   Shengurov, V G ^b   Svetlov, S P ^b   Jantsch, W ^c   Palmetshofer, L ^c   Ellmer, H ^c  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; MULTILAYERS; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); SILICON COMPOUNDS; SUBLIMATION;

SUBLIMATION MOLECULAR BEAM EPITAXY;

OPTICAL FILMS;

EID: 0035152320     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01373-0     Document Type: Erratum

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