Optical Er-doping of Si during sublimational molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 534-537

  Andreev, B A ^a   Andreev, A Yu ^a   Ellmer, H ^b   Hutter, H ^c   Krasil'nik, Z F ^a   Kuznetsov, V P ^d   Lanzerstorfer, S ^b   Palmetshofer, L ^b   Piplits, K ^c   Rubtsova, R A ^d   Sokolov, N S ^e   Shmagin, V B ^a   Stepikhova, M V ^a,b   Uskova, E A ^d  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^d LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^e IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL STRUCTURE; ERBIUM; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBLIMATION;

OPTICAL ACTIVE CENTERS; SUBLIMATIONAL MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0032641867     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01406-7     Document Type: Article

References (7)

1. Stimmer J., Reittinger A., Nützel J.F., Abstreiter G., Holzbrecher H., Buchal Ch. Appl. Phys. Lett. 68:1996;3290.
2. Serna R., Shin Jung H, Lohmeier M, Vlieg E., Polman A, Alkemade P.F.A. J. Appl. Phys. 79:1996;2658.
3. Kuznetsov V.P., Andreev A.Yu., Kuznetsov O.A., Nikolaeva L.E., Zotova T.M., Gudkova N.V. Phys. Stat. Sol. A. 127:1991;371.
4. Przybylinska H., Jantsch W., Suprun-Belevitch Yu., Stepikhova M., Palmetshofer L., Hendorfer G., Kozanecki A., Wilson R.J., Sealy B.J. Phys. Rev. B. 54:1996;2532.
5. Lanzerstorfer S., Palmetshofer L., Jantsch W., Stimmer J. Appl. Phys. Lett. 72:1998;809.
6. Wortman D.E., Morrison C.A., Bradshaw J.L. J. Appl. Phys. 82:1997;2580.
7. Benton J.L., Michel J., Kimerling L.C., Jacobson D.C., Xie Y.-H., Eaglesham D.J., Fitzgerald E.A., Poate J.M. J. Appl. Phys. 70:1991;2667.