Microstructures of GaN and InxGa1-xN films grown by MOCVD on freestanding GaN templates

Materials Research Society Symposium - Proceedings

Volumn 722, Issue , 2002, Pages 79-90

  Jasinski, J ^a   Liliental Weber, Z ^a   Huang, D ^b   Reshchikov, M A ^b   Yun, F ^b   Morkoc H ^b   Sone, C ^c   Park, S S ^c   Lee, K Y ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

STRUCTURAL QUALITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036458922     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-722-k3.1     Document Type: Conference Paper

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