Closing the smoothness and uniformity gap in area fill synthesis

Proceedings of the International Symposium on Physical Design

Volumn , Issue , 2002, Pages 137-142

  Chen, Yu ^a   Kahng, Andrew B ^a   Robins, Gabriel ^a   Zelikovsky, Alexander ^a  

^a Engineering IV   (United States)

Author keywords

Chemical Mechanical Polishing; Filling Algorithms; Monte Carlo

Indexed keywords

ALGORITHMS; CHEMICAL MECHANICAL POLISHING; COMPUTATIONAL METHODS; COMPUTER SIMULATION; INTEGRATED CIRCUIT LAYOUT; LINEAR PROGRAMMING; MONTE CARLO METHODS;

AREA FILL SYNTHESIS;

VLSI CIRCUITS;

EID: 0036377403     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/505418.505422     Document Type: Conference Paper

References (13)

1. Models for pattern dependencies: Capturing effects in oxide, STI, and copper CMP
2. Hierarchical dummy fill for process uniformity
3. Practical iterated fill synthesis for CMP uniformity
4. New monte-carlo algorithms for layout density control
5. Effect of fine-line density and pitch on interconnect ILD thickness variation in oxide CMP process
6. Filling algorithms and analyses for layout density control
7. Filling and slotting: Analysis and algorithms
8. Modeling of chemical-mechanical polishing: A review
9. An integrated characterization and modeling methodology for CMP dielectric planarization
10. A closed-form analytical model for ILD thickness variation in CMP processes
11. Rapid characterization and modeling of pattern dependent variation in chemical mechanical polishing
12. Model-based dummy feature placement for oxide chemical mechanical polishing manufacturability
13. Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process