Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process

Proceedings of the International Symposium on Physical Design

Volumn , Issue , 2001, Pages 118-123

  Tian, R ^a   Tang, X ^a   Wong, D F ^a  

^a University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CHEMICAL POLISHING; COMPUTATIONAL METHODS; NONLINEAR PROGRAMMING; PROBLEM SOLVING; SURFACE TOPOGRAPHY;

SHALLOW TRENCH ISOLATION (STI) PROCESSES;

CMOS INTEGRATED CIRCUITS;

EID: 0034825838     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/369691.369750     Document Type: Conference Paper

References (13)

1. Practical iterated fill synthesis for CMP uniformity
2. Filling algorithms and analyses for layout density control
3. An integrated characterization and modeling methodology for CMP dielectric planarization
4. The theory and design of plate glass polishing machines
5. A closed-form analytical model for ILD thickness variation in CMP processes
6. Model-based dummy feature placement for oxide chemical-mechanical polishing manufacturability
7. A mathematical model of pattern dependence in Cu CMP process