Amplifier array for 12 parallel 10 Gb/s optical-fiber links fabricated in a SiGe production technology

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 89-92

  Schild, A ^a   Rein, H M ^a   Mullrich J ^a   Altenhain, L ^a   Blank, J ^a   Schrodinger K ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BIT ERROR RATE; CAPACITANCE; CAPACITORS; ELECTRIC CURRENT CONTROL; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; FREQUENCIES; INDUCTANCE; METALLIZING; MIM DEVICES; OPTICAL LINKS; PHOTODIODES; SENSITIVITY ANALYSIS; SILICON COMPOUNDS;

TRANSIMPEDANCE;

OPTICAL FIBERS;

EID: 0036309531     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. Special Issue: Optical interconnections for digital systems
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3. Parallel links transform networking equipment
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5. High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical fiber TDM links
6. Si and SiGe bipolar ICs for 10 to 40Gb/s opticalfiber TDM links
7. Design considerations for very-highspeed Si-bipolar IC's operating up to 50 Gb/s
8. Design of high-speed Si/SiGe bipolar ICs for optical-fiber systems with data rates up to 40 Gb/s
9. Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links - Design and realization
10. Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz
11. 75 GHz bipolar production technology for the 21st century