Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links - Design and realization

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 1, 1996, Pages 24-29

  Neuhäuser, Michael ^a,b   Rein, Hans Martin ^a,d,e,f,j   Wernz, Horst ^c,g,h,i  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b SIEMENS AG ÖSTERREICH   (Austria)

^c ANT Nachrichtentechnik   (Germany)

^d UNIVERSITY OF STUTTGART   (Germany)

^e AEG   (Canada)

^f Siemens Devmt Ctr Microlectron ^*

^g DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^h Fiber Optic Systems Group   (Germany)

ⁱ Advanced Development Division

^j IEEE

more..

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CIRCUIT THEORY; CURRENT DENSITY; ELECTRIC IMPEDANCE; FABRICATION; OPTICAL FIBERS; OPTICAL LINKS; PHOTODIODES; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

CURRENT GAIN; CUTOFF FREQUENCY; DRIVING PHOTODIODE; OPTICAL FIBER LINKS; Q RESONANCES; SILICON BIPOLAR TRANSIMPEDANCE PREAMPLIFIERS;

BROADBAND AMPLIFIERS;

EID: 0029734340     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.485841     Document Type: Article

References (9)

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2. V. de la Torre, J. Foerstner, B. Lojek, K. Sakamoto, S. L. Sundaram, N. Tracht, B. Vasquez, and P. Zdebel, "MOSAIC V - A very high performance bipolar technology," in Proc. IEEE 1991 BCTM, Minneapolis, MN, Sept. 1991, pp. 21-24.
3. R. Reimann, "Monolithic integrated wide-band amplifiers in silicon bipolar technology for optical transmission systems in the Gbit/s range" (in German), Ph.D. dissertation, Ruhr-University Bochum, Germany, 1990.
4. H.-M. Rein, M. Neuhäuser, H. Wernz, and V. Flaßnöcker, "A 6.5 Gbit/s transimpedance preamplifier in silicon bipolar technology for optical-fiber transmission links," Frequenz, vol. 46, pp. 174-176, May 1992.
5. M. Möller, H.-M. Rein, and H. Wernz, "13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receivers," IEEE J. Solid-State Circuits, vol. 29, pp. 815-822, July 1994.
6. M. Bußmann, U. Langmann et al., "PRBS generation and error detection above 10 Gb/s using a monolithic Si bipolar IC," IEEE J. Lightwave Tech., vol. 12, pp. 353-359, Feb. 1994.
7. M. Neuhäuser, M. Möller, H.-M. Rein, and H. Wernz, "Low-noise, high-transimpedance Si-bipolar AGC amplifier for 10 Gb/s optical-fiber links," IEEE Photonics Technol. Lett., vol. 7, pp. 549-551, May 1995.
8. T. F. Meister et al., "Sub-20 ps silicon bipolar technology using selective epitaxial growth," in Proc. IEDM '92, San Francisco, Dec. 1992, pp. 401-404.
9. H. Stübing and H.-M. Rein, "A compact physical large-signal model for high-speed bipolar transistors at high current densities, part I: One-dimensional model," IEEE Trans. Electron Devices, vol. 34, pp. 1741-1751, Aug. 1987.