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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2002, Pages 6547-6551

Increase of dielectric constant of an epitaxial (100) yttria-stabilized zirconia film on (100) Si substrate deposited by reactive sputtering in the metallic mode

(2) Horita, Susumu a Kuniya, Takuji a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

Dielectric constant; Heteroepitaxial growth; Metallic mode; Reactive sputtering; Si; Silicon; YSZ

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRIC POTENTIAL; FILM PREPARATION; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PERMITTIVITY; ZIRCONIA;

HETEROEPITAXIAL GROWTH; METALLIC MODE; YTTRIA;

YTTRIUM COMPOUNDS;

EID: 0036152928 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.6547 Document Type: Article

Times cited : (3)

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