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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2002, Pages 6202-6207

A chemical mechanism for determining the influence of boron on silicon epitaxial growth

(4) Maruno, Shigemitsu a Furukawa, Taisuke a Nakahata, Takumi a Abe, Yuji a

a MITSUBISHI ELECTRIC CORPORATION (Japan)

Author keywords

Boron doping; Chemical vapor deposition; Empirical quantum chemistry calculation; Molecular orbital method; Silicon growth; UHV CVD

Indexed keywords

BORON; CALCULATIONS; DESORPTION; DISSOCIATION; DOPING (ADDITIVES); HYDROGEN; MOLECULES; QUANTUM THEORY; SILANES; SILICON; SUBSTRATES; SURFACE CHEMISTRY;

DISILANE; DISSOCIATIVE ADSORPTION; EMPIRICAL QUANTUM CHEMISTRY CALCULATION; MOLECULAR ORBITAL METHOD; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

ADSORPTION;

EID: 0036148523 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.6202 Document Type: Article

Times cited : (3)

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