Effects of adsorption kinetics on the low-temperature growth-rate activation energy in Si gas-source molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6 A, 1997, Pages

  Nakazawa, Hideki ^a   Suemitsu, Maki ^a   Miyamoto, Nobuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; HYDROGEN; REACTION KINETICS; SILANES; TEMPERATURE PROGRAMMED DESORPTION;

ADSORPTION KINETICS; GAS SOURCE MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0031167124     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l703     Document Type: Article

References (11)