Observation of hydrogen-coverage- and temperature-dependent adsorption kinetics of disilane on Si(100) during Si gas-source molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 5 B, 1997, Pages

  Suemitsu, Maki ^a   Nakazawa, Hideki ^a   Morita, Tomoyuki ^a   Miyamoto, Nobuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; HYDROGEN; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOLAYERS; REACTION KINETICS; SEMICONDUCTING SILICON; SURFACE PHENOMENA; TEMPERATURE PROGRAMMED DESORPTION; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); SURFACE MIGRATION;

SILANES;

EID: 0031143859     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l625     Document Type: Article

References (20)