TCAD calibration of USJ profiles for advanced deep sub-μm CMOS processes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 303-308

  Zechner, C ^a   Matveev, D ^a   Erlebach, A ^a   Simeonov, S ^b   Menialenko, V ^b   Mickevicius, R ^b   Foad, M ^c   Al Bayati, A ^c   Lebedev, A ^d   Posselt, M ^d  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

^b Integrated Systems Engineering Inc   (United States)

^c APPLIED MATERIALS INC   (United States)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Calibration; CMOS; Process simulation; TCAD; Ultra shallow junction

Indexed keywords

AMORPHIZATION; ANNEALING; CALIBRATION; COMPUTER SIMULATION; DIFFUSION; ION IMPLANTATION; MATHEMATICAL MODELS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

PROCESS SIMULATION; ULTRA SHALLOW JUNCTIONS (USJ);

CMOS INTEGRATED CIRCUITS;

EID: 0036136132     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00909-0     Document Type: Article

References (10)