Three-dimensional modeling of low-dose BF+2 implantation into single-crystalline silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 278-282

  Murthy, C S ^a   Posselt, M ^b   Frei, Th ^b  

^a IBM   (United States)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000443961     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588461     Document Type: Article

References (19)

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