Nature of precursors for the thermal donor formation in silicon

Solid State Phenomena

Volumn 69, Issue , 1999, Pages 351-356

  Neimash, V B ^a   Puzenko, O O ^a   Kabaldin, O M ^a   Kraitchinskii, A M ^a   Kras'ko, M M ^a   Claeys, C ^b,c   Simoen, E ^b  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTALLINE MATERIALS; DIFFUSION IN GASES; MATHEMATICAL MODELS;

KAISER-FRISCH-REISS MODEL; OXYGEN MICROFLUCTUATION (OMF); OXYGEN-CONTAINING THERMAL DONORS; SILICON CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0032644948     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.69-70.351     Document Type: Article

References (18)

1. C.S. Fuller, J.A. Ditzenberg, N.B. Hannay and E. Buehler, Phys. Rev. 96 (1954) p.833.
2. V.M. Babich, M.I. Bleckan and E.F. Venger, Oxygen in monocrystals of silicon, "Naukova Dumka", Kyiv, 1997, p. 239.
3. L.I. Murin and V.P. Markevich, in Proc. Int. Conf. on Sciense and Technology of Defect Control in Semiconductors, Ed. K. Sumino (North-Holland, Amsterdam, 1990) p. 190.
4. W. Kaiser, H. Frisch and H. Reiss, Phys. Rev.112 (1958) p. 1546.
5. O.M. Kabaldin, V.B. Neimash, V.M. Tsmots' and V.C. Shtym, Ukrainian Phys. Journ. 40 (1995) p. 218.
6. O.M. Kabaldin, V.B. Neimash, V.M. Tsmots', V.I. Shakhovtsov, A.V. Batunina, V.V. Voronkov, G.I. Voronkova and V.P. Kalinushkin, Ukrainian Phys. Journ. 38 (1993) p. 34.
7. O.M. Kabaldin, V.B. Neimash V.M. Tsmots' and I.I. Shpinar, Ukrainian Phys. Journ. 40 (1995) p. 1079.
8. N.T. Bagraev, N.A. Vitovskii, L.S. Vlasenko and T.V. Mashovets, Fiz. Tekh. Poluprov 17 (1983) p. 1979
9. D.I. Brinkevich, V.P. Markevich, L.I. Murin and V.V. Petrov, Fiz. Tekh. Poluprov. 26 (1992) p .682.
10. V.B. Neimash, V.M. Siratskii, A.M. Kraichinskii, O.O. Puzenko, C. Claeys and E. Simoen, in Proc. High Purity Silicon, Eds C. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer and H.J. Dawson, The Electrochem. Soc. Proc. Vol. PV 98-13, The Electrochem. Soc., Pennington, 1998, p. 200.
11. V.P. Markevich and L.I. Murin, Phys. Stat. Solidi. A111 (1989) p. K149.
12. L.A. Kazakevich and P.F. Lugakov, Elektronnaya tekhnika. Series: Materials (1982) p.170.
13. G.D. Watkins, J.W. Corbett and R.S. McDonald, J. Appl. Phys. 53 (1982) p. 7097.
14. L.I. Murin and V.P. Markevich, Fiz. Tekh. Poluprov. 22 (1988) p. 1324.
15. R.C. Newman, M.J. Binns, F.M. Livingston and S. Messoloras, Physica.116B (1983) p. 264.
16. Y. Takano and M. Maki, in: Semiconductor silicon 1973, Eds H.R. Huff and R.R. Burgess, The Electrochemical Society, Pennington, 1973, p. 469.
17. J.C. Mikkelsen, Jr., Appl. Phys. Lett. 40 (1982) p. 336.
18. M. Stavola, J.R. Patel, L.C. Kimerling and P.E. Freeland, Appl.Phys.Lett.42 (1983) p. 73.