Localization of SILC in Flash memories after program/erase cycling

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 1-6

  Ielmini, D ^a   Spinelli, A S ^a   Lacaita, A L ^a   Leone, R ^a   Visconti, A ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; HOT CARRIERS; LEAKAGE CURRENTS; OXIDES;

GATE-STRESS; STRESS-INDUCED LEAKAGE CURRENT (SILC);

FLASH MEMORY;

EID: 0036087158     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

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