Modeling and analysis of via hot spots and implications for ULSI interconnect reliability

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 336-345

  Im, Sungjun ^a   Banerjee, Kaustav ^a   Goodson, Kenneth E ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTROMIGRATION; FINITE ELEMENT METHOD; THERMOANALYSIS; ULSI CIRCUITS;

MULTILEVEL INTERCONNECT SYSTEMS;

ELECTRIC CONNECTORS;

EID: 0036081929     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)

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7. Three-dimensional finite-element investigation of current crowding and peak temperatures in VLSI multilevel interconnects
8. 3-D ICs: A novel chip design for improving deep submicrometer interconnect performance and systems-on-chip integration
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10. Efficiency of extended surfaces
11. Interconnect thermal modeling for accurate simulation of circuit timing and reliability
12. Solving conductive heat transfer problems with electrical-analogue shape factor
13. Thermal conductance of IC interconnects embedded in dielectrics
14. Predicting thermal behavior of interconnects
15. Static temperature distribution in IC chips with isothermal heat sources
16. Three dimensional metallization for vertically integrated circuits
17. Copper wafer bonding
18. Characterization of contact and via failure under short duration high pulsed current stress