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Chinese Physics Letters

Volumn 19, Issue 7, 2002, Pages 1010-1012

Modulation spectroscopy of GaAs covered by InAs quantum dots

(11) Jin, Peng a Meng, Xian Quan a Zhang, Zi Yang a Li, Cheng Ming a Qu, Sheng Chun a Xu, Bo a Liu, Feng Qi a Wang, Zhan Guo a Li, Yi Gang b Zhang, Cun Zhou b Pan, Shi Hong b

a INSTITUTE OF SEMICONDUCTORS (China)

b NANKAI UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; GALLIUM ARSENIDE; INDIUM ARSENIDE; NANOCRYSTALS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; WETTING;

CONTACTLESS ELECTROREFLECTANCE; FERMI LEVEL PINNING; GAAS SURFACES; INAS QUANTUM DOTS; MODULATION SPECTROSCOPY; VALENCE-BAND MAXIMUMS; WETTING LAYER;

III-V SEMICONDUCTORS;

EID: 0036056729 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/19/7/340 Document Type: Article

Times cited : (6)

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