Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy

Journal of Crystal Growth

Volumn 192, Issue 3-4, 1998, Pages 376-380

  Gong, Q ^a   Liang, J B ^a   Xu, B ^a   Ding, D ^a   Li, H X ^a   Jiang, C ^a   Zhou, W ^a   Liu, F Q ^a   Wang, Z G ^a   Qiu, X H ^b   Shang, G Y ^b   Bai, C L ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF CHEMISTRY   (China)

Author keywords

Atomic force microscopy; InAs; Molecular beam epitaxy; Nanometer island; Quantum dot

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTOR QUANTUM DOTS;

INDIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032163677     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00435-7     Document Type: Article

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