Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Chinese Physics Letters

Volumn 18, Issue 10, 2001, Pages 1411-1414

  Zhang, Yuan Chang ^a   Huang, Chang Jun ^a   Ye, Xiao Ling ^a   Xu, Bo ^a   Ding, Ding ^a   Wang, Ji Zheng ^a   Li, Yue Fa ^a   Liu, Feng Qi ^a   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; INDIUM ARSENIDE; NANOCRYSTALS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE DISTRIBUTION; WETTING;

ENSEMBLE EFFECT; INAS-GAAS QUANTUM DOTS; INGAAS DOT; INGAAS QUANTUM DOTS; LOW TEMPERATURE PHOTOLUMINESCENCE; MATRIX; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM DOT SYSTEMS; SELF ASSEMBLED QUANTUM DOTS; WETTING LAYER;

PHOTOLUMINESCENCE;

EID: 0035603383     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/10/336     Document Type: Article

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