Low temperature 193 nm resist reflow process for 100 nm generation contact patterning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4404, Issue , 2001, Pages 396-407

  Van Driessche, Veerle ^a   Lucas, Kevin ^b   Van Roey, Frieda ^c   Grozev, Grozdan ^a   Tzviatkov, Plamen ^a  

^a ARCHChemicals NY ^*  (United States)

^b MOTOROLA INC   (United States)

^c IMEC   (Belgium)

Author keywords

193 nm resists; Contact hole patterning for the 100 and 130 nm generations; Photoresist reflow

Indexed keywords

COMPUTER SIMULATION; ETCHING; IMAGING TECHNIQUES; LITHOGRAPHY; MASKS; PHASE SHIFT; PHOTORESISTS;

RESIST REFLOW TECHNIQUES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0034845707     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.425231     Document Type: Article

References (8)

1. 193nm contact photoresist reflow feasibility study
2. The control of resist flow process for 120 nm small contact hole by latent image
3. Development of resists for thermal flow applicable to mass production
4. Novel routes towards sub-70 nm contact windows by using new KrF photoresist
5. Adjustment of bilayer optical properties and the effect on imaging and etching performance
6. Dual damascene back-end patterning using 248 and 193 nm lithography
7. Lithography aspects of dual damascene interconnect technology