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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 2, 2001, Pages 477-484

HBr concentration and temperature measurements in a plasma etch reactor using diode laser absorption spectroscopy

(5) Chou, Shang I a Baer, Douglas S a Hanson, Ronald K a Collison, Wenli Z b Ni, Tom Q b

a Stanford University (United States)

b LAM RESEARCH CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ALUMINA; DISSOCIATION; INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING; PRESSURE EFFECTS; QUARTZ; SEMICONDUCTOR LASERS; SILICON CARBIDE; SILICON WAFERS;

DIODE LASER WAVELENGTH MODULATION SPECTROSCOPY; HYDROGEN BROMIDE;

BROMINE COMPOUNDS;

EID: 0035273635 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1342863 Document Type: Article

Times cited : (33)

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