High-quality ZrO2 thin films deposited on silicon by high vacuum electron beam evaporation

Chinese Physics Letters

Volumn 19, Issue 3, 2002, Pages 395-397

  Zhang, Ning Lin ^a   Wan, Qing ^a   Song, Zhi Tang ^a   Shen, Qin Wo ^a   Zhu, Xiang Rong ^a   Lin, Cheng Lu ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ELECTRON BEAMS; OXIDE FILMS; PHOTOELECTRICITY; PHYSICAL VAPOR DEPOSITION; VACUUM EVAPORATION; X RAY DIFFRACTION; ZIRCONIA;

CHEMICAL STATE; ELECTRON BEAM EVAPORATION; HIGH QUALITY; HIGH VACUUM; OXIDIZED STATE; P-TYPE; STRUCTURAL INFORMATION; THIN-FILMS; X-RAY PHOTOELECTRIC SPECTROSCOPY; ZIRCONIUM OXIDE FILMS;

THIN FILMS;

EID: 0036004655     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/19/3/333     Document Type: Article

References (14)

1. Part of the SPIE conference on microelectonic device technology III