High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

Solid-State Electronics

Volumn 44, Issue 1, 2000, Pages 185-187

  Kim, T G ^a,b   Ogura, M ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; LASER TUNING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES;

MULTIPLE QUANTUM WIRE (QWR) DIODE LASERS;

SEMICONDUCTOR LASERS;

EID: 0033639767     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00253-1     Document Type: Article

References (6)

1. Kapon E. Proc. IEEE. 80:1992;398.
2. Ogura M, Wang XL, Kim TG, Volitis V and Grousson R, 1999.
3. Kim T.G., Wang X.L., Komori K., Hikosaka K., Ogura M. Electron Lett. 35:1999;639.
4. Osowski M.L., Ranepucci R., Adesida I., Coleman J.J. IEEE Photon Technol. Lett. 9:1997;422.
5. Kim T.G., Son C.S., Kim E.K., Min S.K., Park J.H. Semicond. Sci. Technol. 14:1999;570.
6. Kim T.G., Wang X.-L, Kaji R., Ogura M. Proc. Ninth Int. Conf. on Modulated Semiconductor Structures, Fukuoka, Japan, 12-16 July 1999. 1999;205.