Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy

Semiconductors

Volumn 35, Issue 5, 2001, Pages 533-538

  Odnoblyudov, V A ^a   Kovsh, A R ^a   Zhukov, A E ^a   Maleev, N A ^a   Semenova, E S ^a   Ustinov, V M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035343643     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1371617     Document Type: Article

References (15)

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