Application of HSQ (hydrogen silsesquioxane) based SOG to pre-metal dielectric planarization in STC (stacked capacitor) DRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 112-113

  Lee, H J ^a   Choi, J H ^a   Hwang, B K ^a   Goo, J S ^a   Fujihara, K ^a   Chung, U I ^a   Kim, K H ^a   Lee, S I ^a   Lee, M Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CELLULAR ARRAYS; CURING; DEGRADATION; DIELECTRIC FILMS; DIELECTRIC MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLASS; HYDROGEN INORGANIC COMPOUNDS; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON COMPOUNDS;

DYNAMIC RANDOM ACCESS STORAGE; HOT CARRIER DEGRADATION; HYDROGEN SILSESQUIOXANE; MEMORY CELL STRUCTURE; PRE METAL DIELECTRIC PLANARIZATION; SPIN ON GLASS; STACKED CAPACITOR; THERMAL DESORPTION SPECTROSCOPY; THRESHOLD VOLTAGE CHANGE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0029701423     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)