Selective and non-selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 349-352

  Smith, S A ^a,b   Wolden, C A ^a   Bremser, M D ^a   Hanser, A D ^a   Davis, R F ^a   Lampert, W V ^b  

^a North Carolina State University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; DESIGN OF EXPERIMENTS; ETCHING; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDUCTIVELY COUPLED PLASMA; SEMICONDUCTOR ALLOYS; WIDE BAND GAP SEMICONDUCTORS;

DC BIAS; ETCH RATES; ETCHING BEHAVIOR; GALLIUM NITRIDE (GAN); INDUCTIVELY COUPLED PLASMA (ICP); SELECTIVE ETCHING;

CHLORINE COMPOUNDS;

EID: 84973362811     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711652     Document Type: Conference Paper

References (4)

1. Lin ME, Fan ZF, Ma Z, Allen LH, Morcoc H 1994 Appl. Phys. Lett. 64 (7) 887.
2. Bremser MD, Perry WG, Zheleva T, Edwards NV, Nam OH, Parikh N, Aspnes DE: And Davis RF 1996. MRS Internet J. Nitride Semicond. Res. 1 (8
3. Hanser AD, Wolden CA, Perry WG, Therrien R, Davis RF (not yet published
4. Shul RJ, Briggs RD, Pearton SJ, Vartuli CB, Abernathy CR, Lee JW, Constantine C, Barratt C 1996 MRS Boston, MA 969.