X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 861-863

  Sato, A ^a   Ohtani, K ^a   Terauchi, R ^a   Ohno, Y ^a   Matsukura, F ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; CORRELATION METHODS; INTERFACES (MATERIALS); MONOLAYERS; NEGATIVE IONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; X RAY CRYSTALLOGRAPHY;

HETEROINTERFACES;

MOLECULAR BEAM EPITAXY;

EID: 0032676494     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01475-4     Document Type: Article

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