Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. II. H2 addition to electron cyclotron resonance plasma employing CHF3

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 4, 1996, Pages 2011-2019

  Takahashi, Kunimasa ^a   Hori, Masaru ^a   Goto, Toshio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMS; COMPOSITION; ELECTRON CYCLOTRON RESONANCE; FLUORINE; FLUOROCARBONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FREE RADICALS; HYDROGEN; PLASMAS; SEMICONDUCTOR LASERS; X RAY PHOTOELECTRON SPECTROSCOPY;

ACTINOMETRY; ATOM DENSITY; FLUOROCARBON RADICALS; GAS PHASE REACTIONS; PARTIAL PRESSURE; RADICAL DENSITY; RELATIVE SURFACE LOSS PROBABILITY;

CHEMICAL REACTIONS;

EID: 0030192111     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580076     Document Type: Article

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